본 특허분석은 산업원천기술로드맵의 Top Brand 중 『전자방출 나노소재』기술을 대상으로 하였으며, 산업원천기술로드맵의 취지인 Top down 과제 후보 기술 도출 및 우리나라의 전략기술분야를 선정하는 데에 있어 객관적인 데이터인 특허정보로서 이를 뒷 받침 할 수 있도록 지식경제부의 요청에 의해 특허청이 발주하고 한국특허정보원이 주관하는 사업이다.
분석 기준
전략 핵심 원천기술을 도출하기 위하여 기존의 연구기획과제에서 분석하였던 회피설계, 요지분석 및 기술흐름분석 등은 지양하고정량분석 이외에 특허장벽 등 심층분석을 통해 국가R&D 투자의 우선순위를 선정할 수 있도록 후보 핵심기술 중 연구개발 진입 가능성, 선행특허 회피가능성 등을 고려하여 핵심기술을 선정하였다. 선정된 핵심 원천기술에 대해 정량적인 분석을 진행하여 산업원천 기술개발의 단계별 전략을 수립하는데 객관적인 특허정보를 제공 하였다.
본 보고서는 국가연구개발 기획단계에서 특허정보를 분석하여 우리나라 전자방출 나노소재 기술의 기술 개발 추이 및 수준을 객관적으로 파악하고 효율적인 국가연구개발 정책수립을 위한 기초자료를 제공하고자, 특 허청의 용역사업으로 수행하여 발간한 특허동향조사?분석 결과입니다.
[전자방출 나노소재 기술 中]
자료 출처: e- 특허나라
[더자세한내용을원하는분들을위해원본파일을첨부했습니다]
목차
주요 분석결과 Ⅰ. 개 요 ·············································································· 1 제 1 절 분석 배경 및 목적 ························································ 3 1. 분석 배경 ·················································································· 3 2. 분석 기준 ·················································································· 3 제 2 절 분석범위 ············································································ 4 1. 분석대상 특허 ·········································································· 4 2. 분석대상 기술 ·········································································· 5 3. 분석 지표 ·················································································· 6 Ⅱ. 심층분석 ······································································ 13 제 1 절 핵심 원천기술 분석 결과 ············································ 15 제 2 절 핵심 원천기술별 특허장벽 분석 ································ 22 1. 핵심기술 AAA(전계 방출을 이용한 X-ray source 제작 기 술)의 특허장벽 분석 ····························································· 22 2. 핵심기술 AAB(CNT Paste를 이용한 BLU 제조 기술)의 특 허장벽 분석 ············································································ 34 3. 핵심기술 AAC(직접성장 탄소나노소재를 이용한 BLU 기 술)의 특허장벽 분석 ····························································· 47 4. 핵심기술 AAD(Microwave & Tera Hz generator /amplifier 제조 기술)의 특허장벽 분석 ···························· 60 5. 핵심기술 AAE(CNT 적용 친환경/고효율 램프 개발)의 특 허장벽 분석 ············································································ 69 6. 핵심기술 AAF(고효율 전자 직접 여기 Xe 램프 개발)의 특허장벽 분석 ········································································ 80 7. 핵심기술 AAG(전계방출 전자빔을 이용한 고감도 촬상관 제작 기술)의 특허장벽 분석 ··············································· 89 8. 핵심기술 AAH(고효율 전자방출 탄소나노소재 및 저전압 형광체 기술)의 특허장벽 분석 ········································· 100 9. 핵심기술 AAI(나노소재를 이용한 초소형 Ion thrust)의 특허장벽 분석 ······································································ 112 10. 핵심기술 AAJ(프린팅 공정 Color filter 재료 기술)의 특 허장벽 분석 ········································································ 118 제 3 절 핵심 원천기술 평가 ···················································· 135 1. 핵심 원천기술 평가 ···························································· 135 Ⅲ. 동향분석 ···································································· 137 제 1 절 분석대상 선정 ······························································ 139 1. 분석대상 선정기준 ···························································· 139 제 2 절 전 세계 전자방출 나노소재 분야의 동향 ·············· 140 1. 전자방출 나노소재 분야 특허의 연도별 동향 ·············· 140 2. 주요국가의 역점기술분야 ·················································· 143 3. 미국시장에서 한국의 주력분야 ········································ 146 4. 한국의 기술경쟁력 비교분석 ············································ 148 5. 특허 포트폴리오 분석 ························································ 153 제 3 절 핵심 원천기술별 특허동향 ········································ 159 1. 핵심 원천기술AAA(전계 방출을 이용한 X-ray source 제 작 기술)의 특허동향 ··························································· 159 2. 핵심 원천기술AAB(CNT Paste를 이용한 BLU 제조 기술) 의 특허동향 ·········································································· 169 3. 핵심 원천기술AAC(직접성장 탄소나노소재를 이용한 BLU 기술)의 특허동향 ································································· 177 4. 핵심 원천기술AAD(Microwave & Tera Hz generator/amplifier 제조 기술)의 특허동향 ·················· 185 5. 핵심 원천기술AAE(CNT 적용 친환경/고효율 램프 개발) 의 특허동향 ·········································································· 194 6. 핵심 원천기술AAF(고효율 전자 직접 여기 Xe 램프 개발) 의 특허동향 ·········································································· 203 7. 핵심 원천기술AAH(고효율 전자방출 탄소나노소재 및 저 전압 형광체 기술)의 특허동향 ········································· 212 8. 핵심 원천기술AAJ(프린팅공정 Color Filter 재료 기술)의 특허동향 ················································································ 222 Ⅳ. 결 론 ·········································································· 229 제 1 절 결론 및 시사점 ·························································· 231 1. 결론 ························································································ 231 2. 시사점 ···················································································· 234 Ⅴ. 첨 부 ·········································································· 237